Picosecond memory device unveiled

Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds — equivalent to operating 25 billion times per second — breaking existing limits in information storage speed.

The device, known as PoX, is now the fastest semiconductor charge storage device ever recorded, according to the research team.

Scientists said the breakthrough could have important applications in supporting the ultra-fast operation of large artificial intelligence models.